| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device the characteristic of the capacitor covered with an inter-layer insulation film of which can be enhanced, and to provide a manufacturing method thereof. SOLUTION: The semiconductor device includes: a silicon substrate 51; a first insulation film 59 formed above the silicon substrate 51; a lower electrode 69a formed on the first insulation film 59; a capacitor including a dielectric film 70a and an upper electrode 71a; a first capacitor protection insulation film 73 formed above the capacitor by a sputter method; a second capacitor protection insulation film 72 formed on the first capacitor protection insulation film 73 by a plasma CVD method; and a second insulation film 74 formed on the second capacitor protection insulation film 72. COPYRIGHT: (C)2007,JPO&INPIT
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