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发明名称
具有瓶状深沟渠电容之半导体元件及使用磊晶矽成长制程制造该元件的方法
摘要
一具有一电晶体以及一储存电容之半导体元件。此电晶体包含形成于基底上的源极与汲极区。此储存电容系耦合于该电晶体。此储存电容系由一瓶状沟渠所构成,且具有形成于沟渠中的一磊晶矽层以形成源极与汲极区其中之一的至少一部分。该磊晶矽层可由部分基底进行选择性地成长于沟渠中,使磊晶矽层用以定义该沟渠之瓶状。
申请公布号
TW200636800
申请公布日期
2006.10.16
申请号
TW094121155
申请日期
2005.06.24
申请人
茂德科技股份有限公司
发明人
陈锡杰;陈全基
分类号
H01L21/00
主分类号
H01L21/00
代理机构
代理人
詹铭文;萧锡清
主权项
地址
新竹市新竹科学工业园区力行路19号3楼
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