HIGH MOBILITY HETEROJUNCTION COMPLEMENTARY FIELD EFFECT TRANSISTORS AND METHODS THEREOF,申请号KR20040080439-传众专利搜索

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发明名称	HIGH MOBILITY HETEROJUNCTION COMPLEMENTARY FIELD EFFECT TRANSISTORS AND METHODS THEREOF
摘要
申请公布号	KR100633499(B1)	申请公布日期	2006.10.16
申请号	KR20040080439	申请日期	2004.10.08
申请人		发明人
分类号	H01L27/08;H01L21/20;H01L21/336;H01L21/8238;H01L27/092;H01L29/10;H01L29/78;H01L29/786	主分类号	H01L27/08
代理机构		代理人
主权项
地址

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