| 摘要 |
PROBLEM TO BE SOLVED: To provide an etchant capable of selectively removing a high dielectric constant material and selectively leaving an SiN film, and an etching method. SOLUTION: An etchant for removing a high dielectric constant material film is composed of sulfonic acid system having alkyl group or alkenyl group of carbon numbers of 8 or more or sulfate-based surfactant 10 ppm to 10,000 ppm (wt. ratio), HF 0.01 to 20 wt.%, and water. COPYRIGHT: (C)2007,JPO&INPIT
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