| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device capable of suppressing the fact that a gate oxide film is thinned at a portion adjacent to an element isolation film. SOLUTION: The method of manufacturing the semiconductor device comprises steps of forming a groove 1a whose side view inclines on a semiconductor substrate 1, forming an element isolation film 4a by embedding an insulating film in the groove 1a, and forming a gate oxide film of a transistor by carrying out the thermal oxidation of the semiconductor substrate 1. The step of forming the groove 1a comprises steps of forming a silicon nitride film 3, for example, on the semiconductor substrate 1, forming a resist pattern 50 on the silicon nitride film 3, and forming the groove 1a by using the resist pattern 50 as a mask and by carrying out the anisotropic etching of the silicon nitride film 3 and the semiconductor substrate 1. COPYRIGHT: (C)2007,JPO&INPIT
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