| 摘要 |
PROBLEM TO BE SOLVED: To integrate a device higher by obtaining sufficient electric characteristics of a transistor by recovering surface damage due to etching and increasing the degree of freedom of design, when a first gate insulating film is formed in a first active region and a second gate insulating film is formed in a second active region divisionally. SOLUTION: Patterning is carried out (Fig. 2(a)) so that a processed end 102a of the second gate insulating film 102 partly overlaps with a processed end 101a of the first gate insulating film 101. Then a surface recovering process is carried out (Fig. 2(b)) while the first and second gate insulating films 101 and 102 partly overlap with each other as mentioned above. COPYRIGHT: (C)2007,JPO&INPIT
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