| 摘要 |
PROBLEM TO BE SOLVED: To provide an evaluation method for accurately reflecting self-heat generation characteristics in a power MOS transistor. SOLUTION: In the evaluation method for accurately reflecting the self-heat generation characteristics of the power MOS transistor, a drain voltage VDA in which a drain current starts to drop in association with an increase in the drain voltage is measured (S103) when the drain current starts to drop in association with an increase in the drain voltage (S102); and Id-Vd characteristic data are used for a region where a drain voltage<(≤)VDA, and Id-Vd characteristic data measured by suppressing the self-heat generation of the power MOS transistor are used for a region where a drain voltage≥(>)VDA to extract a model parameter for circuit simulation in the power transistor by reflecting self-heat generation characteristics accurately (S104, S105, S106). COPYRIGHT: (C)2007,JPO&INPIT
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