METHOD FOR MANUFACTURING SILICON SINGLE CRYSTAL, ANNEALED WAFER, AND METHOD FOR MANUFACTURING ANNEALED WAFER

摘要

PROBLEM TO BE SOLVED: To stabilize the quality of an annealed wafer by reliably decreasing SSDs (surface shallow defects which are recessed defects of an extremely wide and shallow shape on the surface), while ensuring generation of void defects other than the SSDs and generation of BMDs (bulk micro defects) indispensable as a gettering source in the bulk. SOLUTION: The density (number) of precipitates relating to oxygen and nitrogen which act as nuclei of SSDs is decreased by controlling three parameters of oxygen concentration, nitrogen concentration and cooling speed in a process of pulling and growing a silicon single crystal based on the knowledge that the density (number) of the a precipitates increases by annealing a silicon wafer, and thereby, SSDs can be decreased. Otherwise, SSDs can be decreased by grinding the wafer surface to a predetermined depth after annealing. COPYRIGHT: (C)2007,JPO&INPIT