| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method and an apparatus of a semiconductor device by which a copper oxide layer formed in a base of a via hole is uniformly removed before a barrier layer is formed without a trouble of damage even if a substrate has a large diameter. SOLUTION: The manufacturing method has a reduction treatment process S101 for reducing the copper oxide layer formed at the base of the via hole by organic acid cleaning, a barrier layer forming process S106 forming the barrier layer by sputtering after the reduction treatment process S101, and a Cu seed layer forming process S107 forming a Cu seed layer by sputtering after the barrier layer is formed. The reduction treatment process S101, the barrier layer forming process S106, and the Cu seed layer forming process S107 are continuously performed in the same manufacture device. Thus, a sufficient contact can uniformly be formed between lower wiring Cu and the barrier layer in a semiconductor substrate plane without deteriorating an interlayer insulating film formed of a low dielectric constant material. COPYRIGHT: (C)2007,JPO&INPIT
|
