| 摘要 |
<P>PROBLEM TO BE SOLVED: To solve the problem that when each RF terminal is connected to a DC bias point via a separation element 30 of a high frequency signal, bias is not sufficiently applied to an HBTs (heterojunction bipolar transistor) and the HBTs cannot be sufficiently operated because a switch circuit device having a switching element constituted by the HBT requires a large base current. <P>SOLUTION: A plurality of unit HBTs are connected in parallel to configure each of collective elements, a common emitter and a common collector of one collective element are connected to one bias point via one separation element, and bias potential is applied to the bias point. Since a base current can be dispersed by grouping the unit HBTs, a base current flowing to the separation element is reduced and voltage drop is reduced. Accordingly, sufficient bias can be applied to the unit HBTs and the HBTs can be operated. <P>COPYRIGHT: (C)2007,JPO&INPIT |
