| 摘要 |
PROBLEM TO BE SOLVED: To provide an etching method by which a tunnel junction film 10a can be etched into a predetermined shape. SOLUTION: Plasma is generated by introducing a mixed gas of a halogen gas and an oxygen gas. Then, with an etched object heated to not less than 100°C nor more than 400°C, the tunnel junction film 10a is etched using the mask 90 formed of TiN, Ti, Ta, Zr, or Hf to form a tunnel junction element 10 having a predetermined shape. COPYRIGHT: (C)2007,JPO&INPIT
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