发明名称 |
Methods of forming a thin-film structure, methods of manufacturing non-volatile semiconductor devices using the same, and resulting non-volatile semiconductor devices |
摘要 |
In a method of forming a thin-film structure employed in a non-volatile semiconductor device, an oxide film is formed on a substrate. An upper nitride film is formed on the oxide film by nitrifying an upper portion of the oxide film through a plasma nitration process. A lower nitride film is formed between the substrate and the oxide film by nitrifying a lower portion of the oxide film through a thermal nitration process. A damage to the thin-film structure generated in the plasma nitration process may be at least partially cured in the thermal nitration process, and/or may be cured in a post-thermal treatment process.
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申请公布号 |
US2006228841(A1) |
申请公布日期 |
2006.10.12 |
申请号 |
US20060399670 |
申请日期 |
2006.04.06 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM CHUL-SUNG;SHIN YU-GYUN;KOO BON-YOUNG;KIM JI-HYUN;NOH YOUNG-JIN |
分类号 |
H01L21/84;H01L21/00 |
主分类号 |
H01L21/84 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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