| 摘要 |
PROBLEM TO BE SOLVED: To provide a technique for miniaturizing a modem device and constituting a capacitive insulating barrier on a semiconductor substrate and a technique for constituting an isolator using the barrier. SOLUTION: An isolator is made to be monolithic by using an SOI or DI substrate as region separating means of the monolithic isolator and forming a high breakdown voltage insulating barrier using an insulating band or an interlayer insulating film. Insulating breakdown voltage of a first side and a second side is secured using an SOI embedding oxide film 2, a trench insulating films 21, 22, 23, and 24, and the interlayer insulating film 4 comprising LOCOS. The insulating breakdown voltage of a capacitor for carrying out signal transfer is secured using interlayer insulating films 6, 7, and 8 comprising LOCOS between diffusion layers 11 and 12 and a metal layer 9. As described above, the miniaturization of a modem device is possible using the monolithic isolator. COPYRIGHT: (C)2007,JPO&INPIT
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