| 摘要 |
PROBLEM TO BE SOLVED: To improve a breakdown voltage between a contact formed in a self-alignment process and a gate electrode. SOLUTION: A recess 11a is formed in a side of laminated pattern B in which a gate structure A including at least a gate (polysilicon 8a) for controlling, a metal electrode 9a, and a hard mask 10a on a silicon substrate 1; and a side wall 13 is formed in the side of laminated pattern B so that it may be embedded. This can make the breakdown voltage between a contact 19 and the gate structure A improve since a spacing between the contact 19 and the metal electrode 9a becomes large compared with the case having no recess 11a. COPYRIGHT: (C)2007,JPO&INPIT
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