| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an excellent positive resist composition for reducing PEB temperature dependency without any problem of outgasing during exposure, by possessing sufficiently excellent contrast under exposure due to EUV light, and to provide a pattern forming method using it. <P>SOLUTION: The positive resist composition contains a resin containing a repeated unit of a specific structure and increasing solubility to alkali developing liquid due to action of acid, and a sulfonium salt compound generating acid due to action of EVU light of a specific structure. The pattern forming method using it is provided. <P>COPYRIGHT: (C)2007,JPO&INPIT |
