P-CHANNEL MOS TRANSISTOR, SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To further increase compression stress to be applied to a channel region by simple configuration in a p-channel MOS transistor capable of improving operation speed by stress application. SOLUTION: Recesses are formed in a source region and a drain region of the p-channel MOS transistor, and these recesses are filled with a compression stress source consisting of a metallic film or a metallic compound film deposited at low temperature. COPYRIGHT: (C)2007,JPO&INPIT