| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid-state imaging device capable of constituting a load transistor having threshold variance equal to that of a transistor of substantially large transistor size even when pixel pitches are made narrow. SOLUTION: Three adjacent MOS transistors Qk1 to Qk3 are connected to output lines 4-k in parallel, MOS transistors Qk4 to Qk6 are connected to the MOS transistors Qk1 to Qk3 in parallel, and further MOS transistors Qk7 to Qk9 are connected to the MOS transistors Qk4 to Qk6 in parallel. The MOS transistors Qk1 to Qk9 which are thus connected constitute load transistors. COPYRIGHT: (C)2007,JPO&INPIT
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