| 摘要 |
The present invention provides an array (20) of magnetoresistive memory elements (10) provided with at least one data retention indicator device (50). The at least one data retention indicator device (50) comprises a first magnetic element (51) and a second magnetic element (52) each having a pre-set magnetisation direction, the pre-set magnetisation direction of the first and second magnetic elements (51, 52) being different from each other. The first and second magnetic elements (51, 52) are suitable for aligning their magnetisation direction with magnetic field lines of an externally applied magnetic field exceeding a detection threshold value. According to the present invention, a parameter of the at least one data retention indicator device (50) is chosen so as to set the detection threshold value of the externally applied magnetic field to be detected. The at least one data retention indicator device (50) has a state or an output indicative of exposure of the magnetoresistive memory elements (10) of the array (20) to said externally applied magnetic field.
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