| 发明名称 |
SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD |
| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device and its manufacturing method capable of restraining a deterioration with an invasion of water. <P>SOLUTION: After a ferroelectric capacitor is formed, an Al wiring 30 (conductive pad) connected to this ferroelectric capacitor is formed. Next, a silicon oxide film 32 and a silicon nitride film 33 are formed around the Al wiring 30. An Al<SB>2</SB>O<SB>3</SB>film 35 is formed as an invasion restraining film for restraining an invasion of water into the silicon oxide film 32. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
| 申请公布号 |
JP2006278942(A) |
申请公布日期 |
2006.10.12 |
| 申请号 |
JP20050099063 |
申请日期 |
2005.03.30 |
| 申请人 |
FUJITSU LTD |
发明人 |
NAGAI KOICHI;SAITO HITOSHI;SUGAWARA KAORU;TAKAHASHI MAKOTO;KUDO MASAHITO;ASAI KAZUHIRO;MIYAZAKI YUKIMASA;SATO KATSUHIRO;SAIGO KAORU |
| 分类号 |
H01L23/52;H01L21/3205;H01L21/768;H01L21/8246;H01L23/522;H01L27/105 |
主分类号 |
H01L23/52 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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