| 摘要 |
PROBLEM TO BE SOLVED: To provide a deposition method and a deposition device capable of suppressing the fluctuation of a deposition rate between the process of continuous deposition and the process of spacing deposition, and capable of stably depositing a fixed film thickness. SOLUTION: A pressure inside a reaction chamber 2 to which a substrate 10 to be processed is carried in is turned to the pressure lower than a deposition pressure first. Then, an inert gas is supplied into the reaction chamber 2, and the inside of the reaction chamber 2 is turned to the almost same pressure as the deposition pressure. Then, while reducing the flow rate of the inert gas to be supplied to the reaction chamber 2, a raw material gas is supplied into the reaction chamber 2 while increasing the flow rate, and the film is formed on the substrate 10 to be processed while maintaining the pressure inside the reaction chamber 2 at the deposition pressure. COPYRIGHT: (C)2007,JPO&INPIT
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