发明名称 |
Method of fabricating semiconductor device |
摘要 |
A method of fabricating a semiconductor device. A semiconductor substrate with a patterned conductive layer on a top surface of the substrate is first provided. A dielectric layer is then formed to cover the substrate. Thereafter, an electron beam irradiation procedure is performed to anneal the patterned conductive layer and reduce resistance of the patterned conductive layer.
|
申请公布号 |
US2006228856(A1) |
申请公布日期 |
2006.10.12 |
申请号 |
US20050094011 |
申请日期 |
2005.03.30 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
LIN KENG-CHU;LIAO YI-CHI;TSAI H. C.;LU YUNG-CHENG;SU HUNG-WEN |
分类号 |
H01L21/8242 |
主分类号 |
H01L21/8242 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|