| 摘要 |
PROBLEM TO BE SOLVED: To easily provide a semiconductive carbon nanotube having a desired characteristic. SOLUTION: Metallic carbon nanotubes 103a, 103b and 103c and a semiconductive carbon nanotube 104 are formed in a mixed state among metal electrodes 102 arranged on a substrate 101. Then, an electron beam is irradiated to the carbon nanotubes 103a and 103b in the semiconductive state and the carbon nanotube 104 with a semiconductor characteristic to be changed. In this case, the given electron beam may be set to 1 kV of accelration voltage and 1×10<SP>-2</SP>or less of quantity of radiation, for example. Thus, the semiconductive carbon nanotubes 113a and 113b and the carbon nanotube 114 with a changed semiconductive characteristic can be obtained by the irradiation of the electron beam. COPYRIGHT: (C)2007,JPO&INPIT |
