| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for realizing a small distance between an active layer and a current block layer with excellent controllability in a buried type semiconductor laser. SOLUTION: The semiconductor laser includes: a first clad layer made of a compound semiconductor containing an impurity of a first conduction type and provided with a projection of a mesa shape; an active layer formed in a stripe shape on the projection and provided with a side surface inclined in an angle 70 degrees or more and 90 degrees or less to an upper surface of the first clad layer; buried layers formed at both sides of the projection and containing an impurity of a second conduction type; a current block layer containing an impurity of the first conduction type formed on the buried layer and provided with a first surface whose one end contacts with a virtual plane formed by extending side surfaces of the active layer and which is inclined, downward from the contacting end, in an angle of approximately 55 degrees to the upper surface of the first clad layer, and also provided with a second surface which is inclined in an angle larger than that of the side surface of the active layer and smaller than that formed by the upper surface of the first clad layer and a surface perpendicular thereto; and a second clad layer containing an impurity of the second conduction type formed on the current block layer and the active layer. COPYRIGHT: (C)2007,JPO&INPIT
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