| 摘要 |
PROBLEM TO BE SOLVED: To provide an optical semiconductor element in a relatively simple constitution for guiding injection currents to a region separated from a part which is a shade of an upper electrode. SOLUTION: A current passage control layer 2 constituted of an n-type AlAs current conducting region 2-1 and an AlxOy current preventing region 2-2, an n-type Al0.4Ga0.6As lower clad layer 3, a p type Al0.15Ga0.85As active layer 4, and a p-type Al0.4Ga0.6As upper clad layer 5 are successively formed on an n-type GaAs substrate 1. Moreover, a P+ type GaAs electrode contact layer 6 having a light emitting window is formed on this, and an intermediate insulating film 7 and a P-electrode layer 8 are formed, and an N-electrode layer 9 is formed on the back face of the n-type GaAs substrate 1. A region which is the shade of the upper electrode layer, when viewed from the light emitting face side, is formed as the AlxOy current preventing region 2-2, and injection currents are introduced to a part which is not shield by the upper electrode. Thus, the decrease in light emission output due to the shape of the P-electrode layer 8 can be improved. |
