发明名称 METHOD OF FORMING ORGANIC TRANSISTOR
摘要 PROBLEM TO BE SOLVED: To provide a method of forming an organic transistor which can form an organic transistor having high dimension accuracy by using a plastic film as a substrate by a printing method. SOLUTION: This method of forming an organic transistor, a method of forming the organic transistor on a plastic base material 1, is provided with a step of applying a lower part electrode ink on the plastic base material 1, and then, drying the lower electrode ink; a step of applying an insulation ink so as to cover the lower electrode ink, and then, drying the insulation ink; a step of applying an upper electrode ink on the insulation ink; a step of thermally processing at least two layers among the lower electrode ink, the insulation ink, and the upper electrode ink collectively to form a laminate; and a step of laminating an organic semiconductor layer 6 on the laminate. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2006278804(A) 申请公布日期 2006.10.12
申请号 JP20050096730 申请日期 2005.03.30
申请人 TOPPAN PRINTING CO LTD 发明人 KINO OSAMU;NAKAMURA RYUICHI
分类号 H01L21/336;H01L21/28;H01L21/288;H01L29/786;H01L51/05 主分类号 H01L21/336
代理机构 代理人
主权项
地址