VERTICAL GROUP III-NITRIDE LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

A vertical group III-nitride light emitting device and a manufacturing method thereof are provided to improve light extraction efficiency and operation voltage characteristics by arranging an undoped GaN layer under an n-side electrode. A p-type clad layer(105), an active layer(107), an n-doped AlxGayIn(1-x-y)N(0<=x<=1, 0<=y<=1, 0<=x+y<=1) layer(109), an undoped GaN layer(111), and an n-side electrode(123) are sequentially stacked on a conductive substrate(101). An unevenness pattern(121) is formed on an upper surface of the undoped GaN layer. The unevenness pattern is not formed on a region where the n-side electrode is formed within the upper surface of the undoped GaN layer. A reflection layer(103) is formed between the conductive substrate and the p-type clad layer.