发明名称 Magnetoresistance effect device having hard magnetic film structural body
摘要 A base film of a hard magnetic film containing Co as a structural element has a crystal metal base film such as a Cr film formed on the main surface of a substrate and a reactive base film (mixing layer) formed between the substrate and the crystal metal base film and having a reactive amorphous layer containing a structural element of the substrate and a structural element of the crystal metal base film. A hard magnetic film containing Co as a structural element is formed on the crystal metal base film. With the crystal metal base film such as the Cr film formed on an amorphous layer, a hard magnetic film with a bi-crystal structure can be obtained with high reproducibility. With the hard magnetic film, magnetic characteristics such as coercive force Hc, residual magnetization Mr, saturated magnetization Ms, and square ratio S can be improved without need to use a thick base film. The hard magnetic film containing Co as a structural element is applied to a bias magnetic field applying film of a magnetoresistance effect device and a record layer of a magnetic record medium.
申请公布号 US7116527(B1) 申请公布日期 2006.10.03
申请号 US19970940020 申请日期 1997.09.29
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 FUKUZAWA HIDEAKI;NAKAMURA SHIN-ICHI;KAMIGUCHI YUZO;IWASAKI HITOSHI;HORI AKIO;HASHIMOTO SUSUMU
分类号 G11B5/33 主分类号 G11B5/33
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