| 摘要 |
A magnetic recording medium which comprises a substrate, an orientation control layer formed directly thereon, and a Co alloy magnetic layer formed thereon directly or indirectly with a Cr underlayer or Cr alloy underlayer interposed between them, the orientation control layer having an L10 crystal structure, L21 crystal structure, fcc crystal structure, or B2 (CsCl) crystal structure containing B, owing to this construction, has a high coercive force and a low noise level and is only slightly vulnerable to thermal fluctuation. A magnetic storage device having a magnetic recording medium, a driver to turn said magnetic recording medium in the recording direction, a magnetic head including a recording element and a read-back element, means to move the magnetic head relative to the magnetic recording medium, and a record-read signal processing means to perform waveform processing on input signals to and output signals from the magnetic head, uses this magnetic recording medium and has a magnetoresistive effect read-back element in its magnetic head. This magnetic storage device has a recording density in excess of 3 Gbit/in<SUP>2</SUP>.
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