| 摘要 |
A thin film transistor array including a substrate, a plurality of scan lines, a plurality of data lines, a plurality of thin film transistors, an etch barrier layer and a plurality of pixel electrodes is provided. The scan lines and the data lines are disposed over the substrate to define a plurality of pixel areas. Each thin film transistor is disposed in one of the pixel areas and driven by the corresponding scan line and data line. The etch barrier layer including a plurality openings is disposed over the scan line or a common line. Each pixel electrode electrically connected to the corresponding thin film transistor is disposed in one of the pixel areas, wherein a portion of each pixel electrode is coupled to the corresponding scan line through one of the openings to form a storage capacitor. Furthermore, a fabricating method of the thin film array is also provided.
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