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发明名称
背面接合形太阳电池及其制造方法
摘要
本发明系不使p^+型扩散层和n^+型扩散层相接触而细微配置者。本发明系于半导体基板1的背面1a使p^+型扩散层2和n^+型扩散层3相互接近而同时形成,且由该半导体基板1的背面1a朝p^+型扩散层2及n^+型扩散层3的外侧端部彼此相接触的交界部分形成凹沟1b,使该等p^+型扩散层2及n^+型扩散层3的外侧端部彼此分离,藉此p^+型扩散层2和n^+型扩散层3隔着该凹沟1b而相互接近配置。
申请公布号
TW200635057
申请公布日期
2006.10.01
申请号
TW094140452
申请日期
2005.11.17
申请人
直江津电子工业股份有限公司;信越化学工业股份有限公司
发明人
大西力;赤塚武;五十岚俊一
分类号
H01L31/04
主分类号
H01L31/04
代理机构
代理人
陈长文
主权项
地址
日本
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