| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device and its manufacturing method capable of lowering an effect of a pollution caused by a heavy metal and lowering a leakage current. <P>SOLUTION: The semiconductor device 1 comprises an n-type semiconductor region 4 formed in a semiconductor substrate, a p-type semiconductor region 3 formed in a position deeper than the region 4 from the surface of the semiconductor substrate, and a heavy-metal-capturing region 5 formed in a part of the region 3. The region 5 is formed so that the diffusion velocity of the heavy metal is slower than that of the region 5 comparing to the region 3. For instance, the region 5 has a boron layer doped by the boron. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
