METHOD OF MANUFACTURING SEMICONDUCTOR LASER ELEMENT HAVING LAMINATE STRUCTURE AND METHOD OF MANUFACTURING SEMICONDUCTOR LASER ELEMENT

摘要

PROBLEM TO BE SOLVED: To form a functional semiconductor layer which performs a stable functionality by controlling so as to suppress the diffusion amount of a p-type dopant to the functional semiconductor layer having predetermined functionalities, such as an activity layer, through a first dopant layer as a buffer layer from a p-type semiconductor layer doped with the p-type dopant. SOLUTION: A method of manufacturing the semiconductor laser element on the upper layer of an n-type InP substrate 11 includes an activity layer laminating step of laminating a p side GaInAsPSCH layer 15; an Fe-InP layer laminating step of laminating the Fe-InP layer 16 in which a predetermined amount of Fe is doped; a p-type cladding layer laminating step of laminating a p-type cladding layer 17 coming in contact with the laminate side of the Fe-InP layer 16; and an interdiffusion step in which the doped Fe and Zn of a p-type dopant are interdiffused, Zn is suppressed to diffuse to the p side GaInAsPSCH layer 15, and predetermined amount of Fe is diffused. COPYRIGHT: (C)2006,JPO&NCIPI