SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF

摘要

A semiconductor memory device and its manufacturing method are provided to make a shallow extension source/drain region shallow and effectively apply strain to a channel region. A gate dielectric(11) and a gate electrode(13) are formed on a semiconductor substrate(10). A first spacer(20) is formed on a sidewall of the gate electrode. A second spacer(50) is formed on a sidewall of the first spacer. An epitaxial pattern(30) is formed between the second spacer and the substrate. An outer profile of the epitaxial pattern is arranged on an outer profile of the second spacer. A source/drain region has an extension source/drain region(40) and a dip source/drain region(60). The extension source/drain region is arranged on the first spacer and formed in the epitaxial pattern and the substrate. The dip source/drain region is arranged on the second spacer and formed in the substrate.