发明名称 SURFACE MODIFICATION METHOD FOR METALLIC MATERIAL, SEMICONDUCTOR MATERIAL, AND THE LIKE, MODIFICATION DEVICE IMPLEMENTING IT, AND CAVITATION SHOTLESS PEENING METHOD EXHIBITING HIGH MACHINABILITY
摘要 PROBLEM TO BE SOLVED: To provide a surface modification method which is implemented by controlling cavitations and intensifying the strength of a crushing impact force, to thereby efficiently modify the surface of a material. SOLUTION: According to the surface modification method for a metallic material, a semiconductor material, etc., a preliminary cavitation generator is arranged on an upstream side of a channel, and a vortex generator for generating large vortexes is arranged on a downstream side of the channel across a predetermined interval sufficient for generation of residual minute bubbles. After the generation of preliminary cavitation by the preliminary cavitation generator, a liquid containing residual minute bubbles generated by crushing preliminary cavitation bubbles as cavitation cores, is produced, followed by pouring and injecting the liquid containing the cavitation cores therein into the vortex generator, to thereby generate large vortex cavitation. Then the vortex cavitation is collided against the metallic material or the semiconductor material, and by a strong impact force generated by collapse of the vortex cavitation bubbles, the surface modification of the metallic material or the semiconductor material is achieved. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006255865(A) 申请公布日期 2006.09.28
申请号 JP20050080280 申请日期 2005.03.18
申请人 TOHOKU UNIV 发明人 SOYAMA HITOSHI
分类号 B23P17/00;B08B3/12;C21D7/06;H01L21/304 主分类号 B23P17/00
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