发明名称 PROCESS FOR PRODUCING THIN NITRIDE FILM ON SAPPHIRE SUBSTRATE AND THIN NITRIDE FILM PRODUCING APPARATUS
摘要 <p>A process for producing a thin nitride film on a sapphire substrate, in which using no resists, miniaturization can be accomplished while relieving vexatious complication of the process; and a relevant thin nitride film producing apparatus. There is provided a process for producing a thin nitride film on a sapphire substrate, comprising irradiating a sapphire substrate having undergone high-temperature hydrogen treatment with electron beams and depositing a thin nitride film on the substrate having undergone the electron beam irradiation according to an organometallic chemical deposition technique to thereby accomplish portraying of thin nitride film.</p>
申请公布号 WO2006100956(A1) 申请公布日期 2006.09.28
申请号 WO2006JP304942 申请日期 2006.03.14
申请人 JAPAN SCIENCE AND TECHNOLOGY AGENCY;Y NATIONAL UNIVERSITY CORPORATION SHIZUOKA UNIVERSIT;SUMIYA, MASATOMO;FUKE, SHUNRO 发明人 SUMIYA, MASATOMO;FUKE, SHUNRO
分类号 C23C16/34;H01L21/205 主分类号 C23C16/34
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