发明名称 |
PROCESS FOR PRODUCING THIN NITRIDE FILM ON SAPPHIRE SUBSTRATE AND THIN NITRIDE FILM PRODUCING APPARATUS |
摘要 |
<p>A process for producing a thin nitride film on a sapphire substrate, in which using no resists, miniaturization can be accomplished while relieving vexatious complication of the process; and a relevant thin nitride film producing apparatus. There is provided a process for producing a thin nitride film on a sapphire substrate, comprising irradiating a sapphire substrate having undergone high-temperature hydrogen treatment with electron beams and depositing a thin nitride film on the substrate having undergone the electron beam irradiation according to an organometallic chemical deposition technique to thereby accomplish portraying of thin nitride film.</p> |
申请公布号 |
WO2006100956(A1) |
申请公布日期 |
2006.09.28 |
申请号 |
WO2006JP304942 |
申请日期 |
2006.03.14 |
申请人 |
JAPAN SCIENCE AND TECHNOLOGY AGENCY;Y NATIONAL UNIVERSITY CORPORATION SHIZUOKA UNIVERSIT;SUMIYA, MASATOMO;FUKE, SHUNRO |
发明人 |
SUMIYA, MASATOMO;FUKE, SHUNRO |
分类号 |
C23C16/34;H01L21/205 |
主分类号 |
C23C16/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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