| 摘要 |
<P>PROBLEM TO BE SOLVED: To achieve a charge-control ferromagnetic semiconductor that shows ferromagnetic transition at least at room temperature, and can control the transition between the ferromagnetism and paramagnetism by a parameter, such as an external electric field. <P>SOLUTION: On a substrate formed by GaAs, crystal growth is performed to a thin film of a semiconductor in which Cr is added to ZnTe that is a group II-VI semiconductor, is a crystal of 5% Cr composition, and is composed by simultaneously doping a dopant by a molecular beam epitaxy method for manufacturing the charge-control ferromagnetic semiconductor. When the added dopant is a p-type, ferromagnetic transition temperature falls. When the added dopant is an n-type, the ferromagnetic transition temperature rises. The ferromagnetic transition temperature can be changed by the type and concentration of the added dopant while the Cr composition is fixed. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
