| 摘要 |
A method of fabricating a structure that includes at least one semiconductor material for applications in microelectronics, optoelectronics or optics. The method includes transferring, onto a support made of a first material, a thin monocrystalline layer made of a second material that differs from the first material, and performing a predetermined heat treatment carrying out at least one strengthening step on a bonding interface between the thin layer and the support. The thickness of the thin layer is selected as a function of the difference between the coefficients of thermal expansion of the first and second materials and as a function of parameters of predetermined heat treatment, such that the stresses exerted by the heat treatment on the assembly of the support and the transferred thin layer leaves the assembly intact. The method further includes depositing an additional thickness of the second material in the monocrystalline state on the thin layer to thicken it. The method is useful for fabrication of hetero-substrates with a relatively thick useful layer.
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