| 摘要 |
PROBLEM TO BE SOLVED: To obtain a steep dopant profile by decreasing a parasitic resistor in active regions, such as an extension part, etc. in an SOI substrate. SOLUTION: A region for forming a source 32a and a region for forming a drain 32b, and regions for forming extension parts 32c and 32d are made amorphous, then recrystallized, and a dopant is activated by suppressing a thermal diffusion exceeding a solid solution limit. Since the dopant is activated exceeding a solution limit if it does in this way, the parasitic resistance in the active regions, such as the extension parts 32c, 32d, etc. is decreased. Moreover, since the thermal diffusion of the dopant is suppressed and is activated, the most dopant profiles immediately after ion implantation is maintained. COPYRIGHT: (C)2006,JPO&NCIPI
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