| 摘要 |
A method of forming efficient photodiodes includes the steps of providing a substrate having a p-surface region on at least a portion thereof, implanting a shallow n-type surface layer into the surface region, and forming a multilayer first anti-reflective (AR) coating on the n-type surface layer. The surface layer is preferably an As or Sb surface layer. The forming the AR step include the steps of depositing or forming a thin oxide layer having a thickness of between 1.5 nm and 8 nm on the shallow surface layer, and depositing a second dielectric different from the thin oxide layer on the thin oxide layer, such as a silicon nitride layer.
|
