发明名称 |
MANUFACTURING METHOD OF A FLASH MEMORY CELL |
摘要 |
A manufacturing method of a flash memory cell is provided. The flash memory cell includes a first conductive type substrate, a stacked gate structure, a first conductive type source/drain region, a metal silicide layer, an inter-layer dielectric layer and a contact plug. The first conductive type substrate has a second conductive type shallow well already formed thereon. The metal silicide layer is disposed within the first conductive type drain region. The contact plug is disposed within the inter-layer dielectric layer and electrically connected with the metal silicide layer in the first conductive type drain region to reduce resistance between the contact plug, the first conductive type drain region and the second conductive type shallow well and increase read-out speed of the flash memory.
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申请公布号 |
US2006216893(A1) |
申请公布日期 |
2006.09.28 |
申请号 |
US20060308806 |
申请日期 |
2006.05.09 |
申请人 |
WANG LEO;DU CHIEN-CHIH;KUO CHAO-WEI;HUANG CHENG-TUNG;PITTIKOUN SAYSAMONE |
发明人 |
WANG LEO;DU CHIEN-CHIH;KUO CHAO-WEI;HUANG CHENG-TUNG;PITTIKOUN SAYSAMONE |
分类号 |
H01L21/336;H01L21/44;H01L21/4763;H01L21/8247;H01L27/115;H01L29/732 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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