Semiconductor photodetector and method for making the same

摘要

The photo detector has semiconductor zones arranged above a p-doped silicon substrate, with dopants for forming a space charge zone. A silicon-germanium glass layer (2) and a silicon layer (3) are provided between the charge zone and the substrate. The layers are provided with different refractive indices for forming distributed Bragg-reflectors for a reflection of electromagnetic radiation to be detected in a direction of the zone. An independent claim is also included for a method for fabricating a semiconductor -photo detector.