SOI substrate, element substrate, semiconductor device, electro-optical apparatus, electronic equipment, method of manufacturing the SOI substrate, method of manufacturing the element substrate, and method of manufacturing the electro-optical apparatus

摘要

An SOI (Silicon On Insulator) substrate is provided with: a support substrate ( 201 ); a single crystal silicon layer ( 202 ) disposed above one surface of the support substrate; an insulation portion ( 205 ) disposed between the support substrate and the single crystal silicon layer, the insulation portion comprising a single layer of an insulation film or a lamination structure of a plurality of insulation films, and including a silicon nitride film or a silicon nitride oxide film ( 204 ).