| 摘要 |
PROBLEM TO BE SOLVED: To provide a magnetic tunnel junction structure having a low switching magnetic field and a high magneto-resistance ratio. SOLUTION: The magnetic tunnel junction structure comprises a free layer and a fixed layer separated by a non-magnetic intermediate layer. This structure comprises the free layer including an amorphous NiFeSiB ferromagnetic layer, the intermediate layer comprising a non-magnetic material formed on the top of the free layer, and the fixed layer which is a ferromagnetic layer formed on the top of the intermediate layer. The free layer can be constituted by, for example, an amorphous NiFeSiB/RU/amouphous NiFeSiB layer. COPYRIGHT: (C)2006,JPO&NCIPI
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