Solid state image pickup device, method of manufacturing the same, and camera

摘要

The solid state image pickup device includes a pixel, the pixel including: a photoelectric conversion region for generating carrier by photoelectric conversion and accumulating the carrier; a carrier holding region for accumulating carrier flowing out from the photoelectric conversion region while the photoelectric conversion region generates and accumulates carrier; a source follower amplifier SF-MOS for amplifying carrier; a transfer MOS transistor Tx-MOS for transferring the carrier accumulated in the photoelectric conversion region to the source follower amplifier SF-MOS; and a transfer MOS transistor Ty-MOS for transferring the carrier accumulated in the carrier holding region to the source follower amplifier SF-MOS. The carrier holding region is formed so as to have a trench structure.