SILIZIUM-GERMANIUM-BIPOLARTRANSISTOR MIT OPTIMIERTEM GERMANIUMPROFIL,申请号DE20015010697-传众专利搜索

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发明名称	SILIZIUM-GERMANIUM-BIPOLARTRANSISTOR MIT OPTIMIERTEM GERMANIUMPROFIL
摘要
申请公布号	DE50110697(D1)	申请公布日期	2006.09.21
申请号	DE20015010697	申请日期	2001.01.08
申请人	INFINEON TECHNOLOGIES AG	发明人	KLEIN, WOLFGANG;LACHNER, RUDOLF;MOLZER, WOLFGANG
分类号	H01L21/331;H01L29/737;H01L29/165	主分类号	H01L21/331
代理机构		代理人
主权项
地址

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