发明名称 EXPOSURE METHOD AND EQUIPMENT, AND DEVICE MANUFACTURING METHOD
摘要 <P>PROBLEM TO BE SOLVED: To increase the resolution while securing a wide depth of focus when transferring patterns arranged in a lattice form. <P>SOLUTION: A mask pattern is prepared wherein a phase inversion type auxiliary pattern is so formed as to surround each of the patterns arranged in a lattice form. A secondary light source on the pupil surface PIL of a lighting optical system which illuminates the mask pattern consists of a tetrapolar secondary light source 21A-21D having a small &sigma; value or a cross-shaped secondary light source 22. The polarized state of the illumination light from the secondary light source 21A-21D or 22 is so set that the illumination light may be linearly polarized in the emission direction from the optical axis AX. <P>COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006253241(A) 申请公布日期 2006.09.21
申请号 JP20050064667 申请日期 2005.03.08
申请人 NIKON CORP 发明人 HIRUKAWA SHIGERU
分类号 H01L21/027;G03F1/29;G03F1/68;G03F7/20 主分类号 H01L21/027
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