发明名称 Capacitive element, semiconductor device, and method of manufacturing the capacitive element
摘要 A capacitive element includes a base member 10 , an underlying insulating film 11 formed on the base member 10, a capacitor Q constructed by forming a lower electrode 13, a capacitor dielectric film 14, and an upper electrode 15 sequentially on the underlying insulating film 11, a lower protection insulating film 16 a formed on the upper electrode 15 to cover at least a part of the capacitor Q, and an upper protection insulating film 16 b formed on the lower protection insulating film 16 a and having a wider energy band gap than the lower protection insulating film 16 a.
申请公布号 US2006211212(A1) 申请公布日期 2006.09.21
申请号 US20050168547 申请日期 2005.06.29
申请人 FUJITSU LIMITED 发明人 BANIECKI JOHN D.;SHIOGA TAKESHI;KURIHARA KAZUAKI
分类号 H01L21/20 主分类号 H01L21/20
代理机构 代理人
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