发明名称 Thin film transistor array substrate using low dielectric insulating layer and method of fabricating the same
摘要 A thin film transistor array substrate is provided. The substrate includes an insulating substrate, a first signal line formed on the insulating substrate, a first insulating layer formed on the first signal line, a second signal line formed on the first insulating layer while crossing over the first signal line, a thin film transistor connected to the first and the second signal lines, a second insulating layer formed on the thin film transistor, the second insulating layer having dielectric constant about 4.0 or less, and the second insulating layer having a first contact hole exposing a predetermined electrode of the thin film transistor, and a first pixel electrode formed on the second insulating layer while being connected to the predetermined electrode of the thin film transistor through the first contact hole.
申请公布号 US2006209223(A1) 申请公布日期 2006.09.21
申请号 US20060436073 申请日期 2006.05.17
申请人 SAMSUNG ELECTRONIC CO., LTD. 发明人 CHOI JOO-HOO;HONG WAN-SHICK;KWON DAE-JIN;JUNG KWAN-WOOK;KIM SANG-GAB;JUNG KYU-HA
分类号 G02F1/1333;G02F1/136;G02F1/1362;G02F1/1368;H01L21/336;H01L21/768;H01L23/522;H01L27/12;H01L29/45;H01L29/49;H01L29/786 主分类号 G02F1/1333
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