| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide highly reliable and inexpensive nonvolatile storage device and semiconductor device in which data can be added not only in fabrication but also any time, and forgery by rewriting is prevented. <P>SOLUTION: The storage device comprises a first conductive layer formed on the insulated surface, a second conductive layer, a first insulating layer sandwiched by the first conductive layer and the second conductive layer, and a second insulating layer covering a part of the first conductive layer wherein the first insulating layer covers the ends of the first conductive layer, the insulated surface, and the second insulating layer. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
