A device structure includes a Ill-nitride wurtzite semiconductor light emitting region (53) disposed between a p-type region (54, 58) and an n-type region (56) . A bonded interface (50) is disposed between two surfaces, one of the surfaces being a surface of the device structure. The bonded interlace facilitates an orientation of the wurtzite c-axis in the light emitting region that confines carriers in the light emitting region, potentially increasing efficiency at high current density.
